BSS138 vs BS170J18Z feature comparison

BSS138 National Semiconductor Corporation

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BS170J18Z National Semiconductor Corporation

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 60 V
Drain Current-Max (ID) 0.22 A 0.5 A
Drain-source On Resistance-Max 6 Ω 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF 10 pF
JEDEC-95 Code TO-236AB TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 2
Package Description CYLINDRICAL, O-PBCY-T3

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Compare BS170J18Z with alternatives