BSS192
vs
RFL1P10
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
SIEMENS A G
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
SMALL OUTLINE, R-PSSO-F3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
240 V
|
100 V
|
| Drain Current-Max (ID) |
0.15 A
|
1 A
|
| Drain-source On Resistance-Max |
20 Ω
|
3.65 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
15 pF
|
30 pF
|
| JESD-30 Code |
R-PSSO-F3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Terminal Form |
FLAT
|
WIRE
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
6
|
| Pbfree Code |
|
No
|
| JEDEC-95 Code |
|
TO-205AF
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare BSS192 with alternatives
Compare RFL1P10 with alternatives