BSS84PH6433XTMA1
vs
VP0106N3-G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
8 Weeks
|
Samacsys Manufacturer |
Infineon
|
Microchip
|
Additional Feature |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
0.17 A
|
0.25 A
|
Drain-source On Resistance-Max |
8 Ω
|
8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
3 pF
|
8 pF
|
JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
0.36 W
|
1 W
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
DUAL
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
6
|
HTS Code |
|
8541.29.00.95
|
JEDEC-95 Code |
|
TO-92
|
Operating Temperature-Min |
|
-55 °C
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare BSS84PH6433XTMA1 with alternatives
Compare VP0106N3-G with alternatives