BST122TRL13
vs
VP3203N3-GP013
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
50 V
|
30 V
|
| Drain Current-Max (ID) |
0.25 A
|
0.65 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-F3
|
O-PBCY-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
FLAT
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Rohs Code |
|
Yes
|
| HTS Code |
|
8541.21.00.95
|
| Additional Feature |
|
HIGH INPUT IMPEDANCE
|
| Drain-source On Resistance-Max |
|
0.6 Ω
|
| Feedback Cap-Max (Crss) |
|
60 pF
|
| JEDEC-95 Code |
|
TO-92
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation Ambient-Max |
|
0.74 W
|
| Power Dissipation-Max (Abs) |
|
0.74 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BST122TRL13 with alternatives
Compare VP3203N3-GP013 with alternatives