BST82
vs
2N6661
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SUPERTEX INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
8541.29.00.95
|
| Samacsys Manufacturer |
NXP
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
80 V
|
90 V
|
| Drain Current-Max (ID) |
0.175 A
|
0.35 A
|
| Drain-source On Resistance-Max |
10 Ω
|
4 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
6 pF
|
10 pF
|
| JESD-30 Code |
R-PDSO-G3
|
O-MBCY-W3
|
| JESD-609 Code |
e3
|
e4
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.3 W
|
6.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin (Sn)
|
GOLD
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
11
|
6
|
| Part Package Code |
|
TO-39
|
| Package Description |
|
TO-39, 3 PIN
|
| Pin Count |
|
3
|
| Additional Feature |
|
HIGH INPUT IMPEDANCE
|
| Case Connection |
|
DRAIN
|
| JEDEC-95 Code |
|
TO-39
|
| Power Dissipation Ambient-Max |
|
6.25 W
|
|
|
|
Compare BST82 with alternatives
Compare 2N6661 with alternatives