BSZ025N04LS vs BSZ023N04LSATMA1 feature comparison

BSZ025N04LS Infineon Technologies AG

Buy Now Datasheet

BSZ023N04LSATMA1 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 130 mJ 130 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 22 A 22 A
Drain-source On Resistance-Max 0.0032 Ω 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N3 S-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A 160 A
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code No
Package Description SMALL OUTLINE, S-PDSO-F3
Pin Count 8
Additional Feature ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
Power Dissipation-Max (Abs) 69 W

Compare BSZ025N04LS with alternatives

Compare BSZ023N04LSATMA1 with alternatives