BSZ025N04LS
vs
BSZ023N04LSATMA1
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
130 mJ
|
130 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
22 A
|
22 A
|
Drain-source On Resistance-Max |
0.0032 Ω
|
0.0032 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
S-PDSO-N3
|
S-PDSO-F8
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
160 A
|
160 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
NO LEAD
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
No
|
Package Description |
|
SMALL OUTLINE, S-PDSO-F3
|
Pin Count |
|
8
|
Additional Feature |
|
ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
|
Power Dissipation-Max (Abs) |
|
69 W
|
|
|
|
Compare BSZ025N04LS with alternatives
Compare BSZ023N04LSATMA1 with alternatives