BSZ130N03LSGATMA1 vs DMN3016LSS-13 feature comparison

BSZ130N03LSGATMA1 Infineon Technologies AG

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DMN3016LSS-13 Diodes Incorporated

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG DIODES INC
Package Description SMALL OUTLINE, S-PDSO-N5 SOP-8
Pin Count 8
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks 8 Weeks
Samacsys Manufacturer Infineon Diodes Incorporated
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE HIGH RELIABILITY
Avalanche Energy Rating (Eas) 9 mJ 25 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 28 A 9.3 A
Drain-source On Resistance-Max 0.013 Ω 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 140 A 80 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form NO LEAD GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Reference Standard AEC-Q101