BSZ130N03MSGATMA1 vs DMN4800LSS-13 feature comparison

BSZ130N03MSGATMA1 Infineon Technologies AG

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DMN4800LSS-13 Diodes Incorporated

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Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG DIODES INC
Package Description SMALL OUTLINE, S-PDSO-N5 GREEN, PLASTIC, SOP-8
Pin Count 8 8
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 14 Weeks 8 Weeks
Samacsys Manufacturer Infineon Diodes Incorporated
Additional Feature AVALANCHE RATED HIGH RELIABILITY
Avalanche Energy Rating (Eas) 9 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 9 A 9 A
Drain-source On Resistance-Max 0.015 Ω 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A 50 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form NO LEAD GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code SOT
Power Dissipation-Max (Abs) 1.46 W