BUK456-800A vs IRFBE30PBF feature comparison

BUK456-800A NXP Semiconductors

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IRFBE30PBF International Rectifier

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, R-PSFM-T3 LEAD FREE PACKAGE-3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 4 A 4.1 A
Drain-source On Resistance-Max 3 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Pulsed Drain Current-Max (IDM) 16 A 16 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 210 ns
Turn-on Time-Max (ton) 65 ns
Base Number Matches 3 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-220AB
Pin Count 3
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 260 mJ
JESD-609 Code e3
Peak Reflow Temperature (Cel) 250
Power Dissipation-Max (Abs) 125 W
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Time@Peak Reflow Temperature-Max (s) 30

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