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Transistors Power Field-Effect Transistors IRFBE30PBF

Transistors
IRFBE30PBF
Description: Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRFBE30PBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFBE30PBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   627
RFQ
Bristol Electronics   182
RFQ
Chip 1 Exchange INSTOCK 7176
RFQ

CAD Models for IRFBE30PBF by International Rectifier
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Part Data Attributes for IRFBE30PBF by International Rectifier
Parametric Data

IRFBE30PBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
LEAD FREE PACKAGE-3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
260 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
4.1 A
Drain-source On Resistance-Max
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
250
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
16 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFBE30PBF
    International Rectifier
    Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRFBE30PBF

This table gives cross-reference parts and alternative options found for IRFBE30PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBE30PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
STP4NA80 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBE30PBF vs STP4NA80
IRFBE30 Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRFBE30PBF vs IRFBE30
MTP4N80E 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBE30PBF vs MTP4N80E
BUZ80A BUZ80A onsemi IRFBE30PBF vs BUZ80A
BUK456-800A TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFBE30PBF vs BUK456-800A
BUZ80A 3A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBE30PBF vs BUZ80A
BUZ80A Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRFBE30PBF vs BUZ80A
IRFBE30 Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBE30PBF vs IRFBE30
BUZ80A Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRFBE30PBF vs BUZ80A
BUZ80A 3.8A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBE30PBF vs BUZ80A
Part Number Description Manufacturer Compare
BUZ80A 3.8A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBE30PBF vs BUZ80A
IRFBE30 Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRFBE30PBF vs IRFBE30
BUZ80A Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IRFBE30PBF vs BUZ80A
BUZ81 Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRFBE30PBF vs BUZ81
MTP4N80E 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBE30PBF vs MTP4N80E
IRFBE30 Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBE30PBF vs IRFBE30
BUZ80A Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRFBE30PBF vs BUZ80A
BUZ80A 3A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBE30PBF vs BUZ80A
STP4NA80 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBE30PBF vs STP4NA80
BUK456-800A TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFBE30PBF vs BUK456-800A

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