BUK9M9R1-40EX
vs
NTD5804NG
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NEXPERIA
|
ON SEMICONDUCTOR
|
| Package Description |
SMALL OUTLINE, R-PSSO-G4
|
IN-LINE, R-PSIP-T3
|
| Pin Count |
8
|
3
|
| Manufacturer Package Code |
SOT1210
|
CASE 369D-01
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
13 Weeks
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Avalanche Energy Rating (Eas) |
42.8 mJ
|
195 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
40 V
|
40 V
|
| Drain Current-Max (ID) |
64 A
|
69 A
|
| Drain-source On Resistance-Max |
0.0091 Ω
|
0.0085 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G4
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
258 A
|
125 A
|
| Reference Standard |
AEC-Q101; IEC-60134
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
71 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare BUK9M9R1-40EX with alternatives
Compare NTD5804NG with alternatives