BUT13P vs MJ10005P feature comparison

BUT13P STMicroelectronics

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MJ10005P STMicroelectronics

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Collector Current-Max (IC) 28 A 20 A
Collector-Emitter Voltage-Max 400 V 500 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 30 40
JEDEC-95 Code TO-218 TO-218
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 125 W 125 W
Power Dissipation-Max (Abs) 150 W 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 2100 ns 2000 ns
Turn-on Time-Max (ton) 600 ns 800 ns
VCEsat-Max 5 V 3 V
Base Number Matches 2 2
Package Description FLANGE MOUNT, R-PSFM-T3
Additional Feature MULTIEPITAXIAL PLANAR