BUZ10
vs
MTD2N40E-T4
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
MOTOROLA INC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
50 V
|
400 V
|
| Drain Current-Max (ID) |
19.3 A
|
2 A
|
| Drain-source On Resistance-Max |
0.1 Ω
|
3.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-MSFM-T3
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
| Avalanche Energy Rating (Eas) |
|
45 mJ
|
| Case Connection |
|
DRAIN
|
| Pulsed Drain Current-Max (IDM) |
|
6 A
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BUZ10 with alternatives
Compare MTD2N40E-T4 with alternatives