Datasheets
BUZ10 by:

Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BUZ10 by TT Electronics Resistors

Overview of BUZ10 by TT Electronics Resistors

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Applications Industrial Automation Smart Cities

Part Details for BUZ10

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BUZ10 Part Data Attributes

BUZ10 TT Electronics Resistors
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BUZ10 TT Electronics Resistors Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Obsolete
Ihs Manufacturer TT ELECTRONICS PLC
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 19.3 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ10

This table gives cross-reference parts and alternative options found for BUZ10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ10 vs HUF75309P3
BUZ10 Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens BUZ10 vs BUZ10
BUZ11A Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUZ10 vs BUZ11A
BUZ10 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG BUZ10 vs BUZ10
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ10 vs HUF75309P3_NL
RFP25N06 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ10 vs RFP25N06
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ10 vs BUZ11A
BUZ10 TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,20A I(D),TO-220AB Freescale Semiconductor BUZ10 vs BUZ10
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUZ10 vs IRFZ30
BUZ11A 30A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ10 vs BUZ11A
Part Number Description Manufacturer Compare
BUK453-60A TRANSISTOR 22 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors BUZ10 vs BUK453-60A
RFD14N05L N-Channel Logic Level Power MOSFET 50V, 14A, 100mΩ, 1800-TUBE onsemi BUZ10 vs RFD14N05L
NTD18N06LT4G Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi BUZ10 vs NTD18N06LT4G
2SK2412-AZ Power Field-Effect Transistor, 20A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group BUZ10 vs 2SK2412-AZ
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi BUZ10 vs MTD1N50E
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation BUZ10 vs FQD24N08
IRFR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2 Infineon Technologies AG BUZ10 vs IRFR024NTRPBF
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation BUZ10 vs RFD14N05_NL
NTD18N06 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUZ10 vs NTD18N06
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics BUZ10 vs STD30NE06

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