BYS10-35-M3/TR3
vs
933206080113
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
NXP SEMICONDUCTORS
|
| Package Description |
SMA, 2 PIN
|
O-LALF-W2
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Factory Lead Time |
8 Weeks
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Additional Feature |
FREE WHEELING DIODE, LOW POWER LOSS
|
LOW LEAKAGE CURRENT
|
| Application |
EFFICIENCY
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.5 V
|
1 V
|
| JEDEC-95 Code |
DO-214AC
|
|
| JESD-30 Code |
R-PDSO-C2
|
E-LALF-W2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
40 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
1.5 A
|
0.8 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ELLIPTICAL
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
35 V
|
600 V
|
| Reverse Current-Max |
500 µA
|
1 µA
|
| Surface Mount |
YES
|
NO
|
| Technology |
SCHOTTKY
|
AVALANCHE
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
C BEND
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
1
|
| Breakdown Voltage-Min |
|
650 V
|
| Case Connection |
|
ISOLATED
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
IEC 134
|
| Reverse Recovery Time-Max |
|
3 µs
|
| Reverse Test Voltage |
|
600 V
|
|
|
|
Compare BYS10-35-M3/TR3 with alternatives
Compare 933206080113 with alternatives