BYV26A(Z) vs S1DF-TR2G feature comparison

BYV26A(Z) Galaxy Microelectronics

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S1DF-TR2G Taiwan Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 2.5 V 1.1 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 200 V 200 V
Reverse Recovery Time-Max 0.03 µs
Surface Mount NO YES
Base Number Matches 2 1
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE
Application GENERAL PURPOSE
Diode Element Material SILICON
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reverse Current-Max 5 µA
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL

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