BYV27-150
vs
BYV27-150
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
GENERAL INSTRUMENT CORP
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
PATENTED DEVICE
|
|
| Application |
EFFICIENCY
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.07 V
|
1.07 V
|
| JEDEC-95 Code |
DO-204AP
|
|
| JESD-30 Code |
E-LALF-W2
|
E-LALF-W2
|
| Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
2 A
|
1.3 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ELLIPTICAL
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Current-Max |
1 µA
|
1 µA
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
3
|
| Rohs Code |
|
No
|
| Package Description |
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Pin Count |
|
2
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
225
|
| Technology |
|
AVALANCHE
|
|
|
|
Compare BYV27-150 with alternatives
Compare BYV27-150 with alternatives