BYV79EB-100T/R
vs
UGB18DCT-E3/81
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
R-PSSO-G2
|
D2PAK-3/2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
SURGE CAPABILITY
|
FREE WHEELING DIODE
|
| Application |
ULTRA FAST SOFT RECOVERY
|
EFFICIENCY
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SINGLE
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.4 V
|
1.2 V
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Non-rep Pk Forward Current-Max |
160 A
|
175 A
|
| Number of Elements |
1
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
14 A
|
9 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
100 V
|
200 V
|
| Reverse Recovery Time-Max |
0.03 µs
|
0.03 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Vishay
|
| JEDEC-95 Code |
|
TO-263AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
245
|
| Reverse Current-Max |
|
10 µA
|
| Reverse Test Voltage |
|
200 V
|
| Terminal Finish |
|
TIN OVER NICKEL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BYV79EB-100T/R with alternatives
Compare UGB18DCT-E3/81 with alternatives