BZD27C5V6P vs BZD27C5V6P-M-08 feature comparison

BZD27C5V6P Galaxy Semi-Conductor Co Ltd

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BZD27C5V6P-M-08 Vishay Semiconductors

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 5.9 V
Breakdown Voltage-Min 5.2 V
Breakdown Voltage-Nom 5.6 V
Clamping Voltage-Max 8.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE ZENER DIODE
Dynamic Impedance-Max 4 Ω 2 Ω
Forward Voltage-Max (VF) 1.2 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Peak Rev Power Dis-Max 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.8 W 0.8 W
Reference Voltage-Nom 5.6 V 5.6 V
Rep Pk Reverse Voltage-Max 4.6 V
Reverse Current-Max 1500 µA
Reverse Test Voltage 4.6 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Voltage Tol-Max 7.1% 7.14%
Working Test Current 100 mA 100 mA
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-219AB
Package Description R-PDSO-F2
Pin Count 2
JEDEC-95 Code DO-219AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare BZD27C5V6P with alternatives

Compare BZD27C5V6P-M-08 with alternatives