BZT52C4V3
vs
1N6315BD2B.RAD
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
SEMELAB LTD
|
| Package Description |
SOD-123F, 2 PIN
|
R-CDSO-N2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Samacsys Manufacturer |
Taiwan Semiconductor
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
90 Ω
|
|
| JESD-30 Code |
R-PDSO-F2
|
R-CDSO-N2
|
| JESD-609 Code |
e3
|
|
| Knee Impedance-Max |
564 Ω
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Reference Voltage-Nom |
4.3 V
|
4.3 V
|
| Reverse Current-Max |
2.7 µA
|
|
| Reverse Test Voltage |
1 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
FLAT
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
5 mA
|
20 mA
|
| Base Number Matches |
24
|
1
|
| Pin Count |
|
2
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare BZT52C4V3 with alternatives
Compare 1N6315BD2B.RAD with alternatives