BZT52H-C3V6
vs
MX1N5227DUR-1E3
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MICROSEMI CORP
|
| Package Description |
PLASTIC PACKAGE-2
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS, MLL34, MELF-2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Samacsys Manufacturer |
NXP
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
500 Ω
|
|
| JESD-30 Code |
R-PDSO-F2
|
O-LELF-R2
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.375 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
3.6 V
|
3.6 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
Tin (Sn)
|
MATTE TIN
|
| Terminal Form |
FLAT
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Voltage Tol-Max |
5.56%
|
1%
|
| Working Test Current |
5 mA
|
20 mA
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
DO-213AA
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
DO-213AA
|
| Operating Temperature-Min |
|
-65 °C
|
| Reference Standard |
|
MIL-19500
|
|
|
|
Compare BZT52H-C3V6 with alternatives
Compare MX1N5227DUR-1E3 with alternatives