BZT52H-C8V2,115 vs 1N756AUR-1 feature comparison

BZT52H-C8V2,115 NXP Semiconductors

Buy Now Datasheet

1N756AUR-1 Defense Logistics Agency

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS DEFENSE LOGISTICS AGENCY
Part Package Code SOD-123
Package Description PLASTIC PACKAGE-2 MELF-2
Pin Count 2
Manufacturer Package Code SOD123F
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 80 Ω
JESD-30 Code R-PDSO-F2 O-LELF-R2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.375 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 8.2 V 8.2 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish TIN
Terminal Form FLAT WRAP AROUND
Terminal Position DUAL END
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 6.1% 5%
Working Test Current 5 mA 20 mA
Base Number Matches 1 4
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED
JEDEC-95 Code DO-213AA

Compare BZT52H-C8V2,115 with alternatives

Compare 1N756AUR-1 with alternatives