BZV55-B39 vs BZV55-B39,115 feature comparison

BZV55-B39 Galaxy Microelectronics

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BZV55-B39,115 NXP Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 130 Ω 130 Ω
JESD-30 Code O-LELF-R2 O-LELF-R2
Knee Impedance-Max 350 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.4 W
Reference Standard MIL-STD-202
Reference Voltage-Nom 39 V 39 V
Reverse Current-Max 0.05 µA
Reverse Test Voltage 28 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Temp Coeff-Max 41.2 mV/°C
Voltage Tol-Max 2% 2%
Working Test Current 5 mA 2 mA
Base Number Matches 7 2
Rohs Code Yes
Part Package Code MELF
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD80C
Factory Lead Time 4 Weeks
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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