BZV55-B4V7 vs BZV55-B4V7,115 feature comparison

BZV55-B4V7 General Instrument Corp

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BZV55-B4V7,115 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer GENERAL INSTRUMENT CORP NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2 O-LELF-R2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 4.7 V 4.7 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Voltage Tol-Max 2% 2%
Working Test Current 5 mA 5 mA
Base Number Matches 7 2
Rohs Code Yes
Part Package Code MELF
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD80C
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 4 Weeks
Dynamic Impedance-Max 80 Ω
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 3 µA
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
Voltage Temp Coeff-Max 0.2 mV/°C

Compare BZV55-B4V7 with alternatives

Compare BZV55-B4V7,115 with alternatives