BZV55-C4V3
vs
MMSZ4V3T1
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MOTOROLA INC
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
R-PDSO-G2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
compliant
|
unknown
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
90 Ω
|
|
| JESD-30 Code |
O-LELF-R2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Package Body Material |
GLASS
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
LONG FORM
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.4 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Voltage-Nom |
4.3 V
|
4.3 V
|
| Reverse Current-Max |
3 µA
|
3 µA
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
WRAP AROUND
|
GULL WING
|
| Terminal Position |
END
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Voltage Temp Coeff-Max |
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
9
|
2
|
| Manufacturer Package Code |
|
CASE 425
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
|
|
|
Compare BZV55-C4V3 with alternatives
Compare MMSZ4V3T1 with alternatives