BZV55C18 vs BZT55C18L1G feature comparison

BZV55C18 North American Philips Discrete Products Div

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BZT55C18L1G Taiwan Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 45 Ω 50 Ω
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Temperature-Max 200 °C 175 °C
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 18 V 18 V
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL
Voltage Tol-Max 5% 5%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1
Case Connection ISOLATED
Diode Element Material SILICON
JEDEC-95 Code DO-213AA
JESD-30 Code O-LELF-R2
Knee Impedance-Max 170 Ω
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 0.1 µA
Reverse Test Voltage 13 V
Technology ZENER
Terminal Form WRAP AROUND
Terminal Position END
Time@Peak Reflow Temperature-Max (s) 30

Compare BZV55C18 with alternatives

Compare BZT55C18L1G with alternatives