BZV55C3V3-GT1
vs
BZV55-C3V3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
O-LELF-R2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ROUND
|
|
| Package Style |
LONG FORM
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity |
UNIDIRECTIONAL
|
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Voltage-Nom |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
|
| Terminal Form |
WRAP AROUND
|
|
| Terminal Position |
END
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Voltage Tol-Max |
6.06%
|
5%
|
| Working Test Current |
5 mA
|
5 mA
|
| Base Number Matches |
2
|
7
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Dynamic Impedance-Max |
|
95 Ω
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
200 °C
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
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