BZV85-C18,133 vs JAN1N3026B feature comparison

BZV85-C18,133 NXP Semiconductors

Buy Now Datasheet

JAN1N3026B Defense Logistics Agency

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DEFENSE LOGISTICS AGENCY
Part Package Code DO-4
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 DO-13, 2 PIN
Pin Count 2
Manufacturer Package Code SOD66
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Factory Lead Time 4 Weeks
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 20 Ω
JEDEC-95 Code DO-41 DO-13
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Voltage-Nom 18 V 18 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 30
Voltage Tol-Max 5% 5%
Working Test Current 15 mA 14 mA
Base Number Matches 1 3
Qualification Status Not Qualified
Reference Standard MIL-19500/115K

Compare BZV85-C18,133 with alternatives

Compare JAN1N3026B with alternatives