BZX79-C3V6 vs BZX79C3V6-AP feature comparison

BZX79-C3V6 Galaxy Microelectronics

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BZX79C3V6-AP Micro Commercial Components

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Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MICRO COMMERCIAL COMPONENTS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 90 Ω 90 Ω
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Knee Impedance-Max 600 Ω 600 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Standard MIL-STD-202
Reference Voltage-Nom 3.6 V 3.6 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 1 V 1 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Temp Coeff-Max -1.44 mV/°C
Voltage Tol-Max 5% 5.56%
Working Test Current 5 mA 5 mA
Base Number Matches 7 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-35
Package Description O-LALF-W2
Pin Count 2
Additional Feature METALLURGICAL BONDED
Forward Voltage-Max (VF) 0.9 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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