BZX84B4V7_R2_00001
vs
SZ-MMBZ5231BLT3G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
ON SEMICONDUCTOR
|
| Package Description |
R-PDSO-G3
|
R-PDSO-G3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.41 W
|
0.225 W
|
| Reference Voltage-Nom |
4.7 V
|
5.1 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
30
|
| Voltage Tol-Max |
2%
|
5.1%
|
| Working Test Current |
5 mA
|
20 mA
|
| Base Number Matches |
1
|
2
|
| Configuration |
|
SINGLE
|
| Dynamic Impedance-Max |
|
17 Ω
|
| JEDEC-95 Code |
|
TO-236AB
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reference Standard |
|
AEC-Q101
|
|
|
|
Compare BZX84B4V7_R2_00001 with alternatives
Compare SZ-MMBZ5231BLT3G with alternatives