BZX85C33
vs
1N5257BAMO
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
35 Ω
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
0.5 W
|
| Reference Voltage-Nom |
33 V
|
33 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
8 mA
|
3.8 mA
|
| Base Number Matches |
9
|
1
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
O-LALF-W2
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-65 °C
|
| Package Body Material |
|
GLASS
|
| Package Shape |
|
ROUND
|
| Package Style |
|
LONG FORM
|
| Qualification Status |
|
Not Qualified
|
| Reverse Current-Max |
|
0.1 µA
|
| Technology |
|
ZENER
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
AXIAL
|
| Voltage Temp Coeff-Max |
|
30.36 mV/°C
|
|
|
|
Compare BZX85C33 with alternatives
Compare 1N5257BAMO with alternatives