CBSL30
vs
2N6080
feature comparison
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ASI SEMICONDUCTOR INC
|
MICROSEMI CORP
|
Package Description |
FLANGE MOUNT, R-CDFM-F6
|
POST/STUD MOUNT, O-XRPM-F4
|
Pin Count |
6
|
4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Collector Current-Max (IC) |
7.5 A
|
1 A
|
Collector-Base Capacitance-Max |
50 pF
|
20 pF
|
Collector-Emitter Voltage-Max |
25 V
|
18 V
|
Configuration |
SINGLE
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE) |
15
|
5
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
JESD-30 Code |
R-CDFM-F6
|
O-XRPM-F4
|
Number of Elements |
1
|
1
|
Number of Terminals |
6
|
4
|
Operating Temperature-Max |
200 °C
|
200 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
FLANGE MOUNT
|
POST/STUD MOUNT
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation-Max (Abs) |
58 W
|
12 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
RADIAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
No
|
Rohs Code |
|
No
|
Additional Feature |
|
HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
|
JESD-609 Code |
|
e0
|
Terminal Finish |
|
TIN LEAD
|
Transition Frequency-Nom (fT) |
|
200 MHz
|
|
|
|
Compare CBSL30 with alternatives
Compare 2N6080 with alternatives