Part Details for 2N6080 by Microsemi Corporation
Overview of 2N6080 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N6080
2N6080 CAD Models
2N6080 Part Data Attributes
|
2N6080
Microsemi Corporation
Buy Now
Datasheet
|
Compare Parts:
2N6080
Microsemi Corporation
RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN
|
Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Package Description | POST/STUD MOUNT, O-XRPM-F4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS | |
Collector Current-Max (IC) | 1 A | |
Collector-Base Capacitance-Max | 20 pF | |
Collector-Emitter Voltage-Max | 18 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 5 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | O-XRPM-F4 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | ROUND | |
Package Style | POST/STUD MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 12 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | FLAT | |
Terminal Position | RADIAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz |
Alternate Parts for 2N6080
This table gives cross-reference parts and alternative options found for 2N6080. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6080, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SD1275-01 | VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.380 INCH, PLASTIC, M113, FM-4 | STMicroelectronics | 2N6080 vs SD1275-01 |
MRF5175 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, PACKAGE STYLE .280 4L STUD, 4 PIN | Advanced Semiconductor Inc | 2N6080 vs MRF5175 |
SD1070 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN | Microsemi Corporation | 2N6080 vs SD1070 |
SD1272 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN | Microsemi Corporation | 2N6080 vs SD1272 |
MRF653 | UHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | 2N6080 vs MRF653 |
SD1135 | UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.280 INCH, PLASTIC, M122, 4 PIN | STMicroelectronics | 2N6080 vs SD1135 |
ULBM5 | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, STUD PACKAGE-4 | Advanced Semiconductor Inc | 2N6080 vs ULBM5 |
SD1075 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, 0.500 INCH, PLASTIC, M111, FM-6 | Microsemi Corporation | 2N6080 vs SD1075 |
VHB50-28S | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 | Advanced Semiconductor Inc | 2N6080 vs VHB50-28S |
TPM405 | UHF BAND, Si, NPN, RF POWER TRANSISTOR | Motorola Mobility LLC | 2N6080 vs TPM405 |