CFH120-08
vs
NE425S01-T1
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
| Package Description |
PLASTIC, MW-4, 4 PIN
|
|
| Pin Count |
4
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
3 V
|
3 V
|
| Drain Current-Max (ID) |
0.04 A
|
0.02 A
|
| FET Technology |
HIGH ELECTRON MOBILITY
|
HETERO-JUNCTION
|
| Highest Frequency Band |
K BAND
|
KU BAND
|
| JESD-30 Code |
R-PDSO-G4
|
X-PXMW-G4
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
UNSPECIFIED
|
| Package Style |
SMALL OUTLINE
|
MICROWAVE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.18 W
|
|
| Power Gain-Min (Gp) |
11.5 dB
|
10.5 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
UNSPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
2
|
| Case Connection |
|
SOURCE
|
|
|
|
Compare CFH120-08 with alternatives
Compare NE425S01-T1 with alternatives