CJD122BK
vs
MJD122
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
SAMSUNG SEMICONDUCTOR INC
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
COLLECTOR
|
|
Collector Current-Max (IC) |
8 A
|
8 A
|
Collector-Base Capacitance-Max |
200 pF
|
|
Collector-Emitter Voltage-Max |
100 V
|
|
Configuration |
DARLINGTON
|
DARLINGTON
|
DC Current Gain-Min (hFE) |
100
|
1000
|
JESD-30 Code |
R-PSSO-G2
|
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
|
Number of Terminals |
2
|
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity/Channel Type |
NPN
|
NPN
|
Power Dissipation Ambient-Max |
20 W
|
|
Power Dissipation-Max (Abs) |
20 W
|
20 W
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
GULL WING
|
|
Terminal Position |
SINGLE
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Transition Frequency-Nom (fT) |
4 MHz
|
|
VCEsat-Max |
4 V
|
|
Base Number Matches |
1
|
15
|
|
|
|
Compare CJD122BK with alternatives