CMM5114D1RZ
vs
D2148H
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
ROCHESTER ELECTRONICS LLC
|
| Package Description |
DIP, DIP18,.3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| I/O Type |
COMMON
|
|
| JESD-30 Code |
R-XDIP-T18
|
|
| JESD-609 Code |
e0
|
|
| Memory Density |
4096 bit
|
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
4
|
|
| Number of Terminals |
18
|
|
| Number of Words |
1024 words
|
|
| Number of Words Code |
1000
|
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
1KX4
|
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
CERAMIC
|
|
| Package Code |
DIP
|
|
| Package Equivalence Code |
DIP18,.3
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Parallel/Serial |
PARALLEL
|
|
| Qualification Status |
Not Qualified
|
|
| Screening Level |
38535Q/M;38534H;883B
|
|
| Supply Current-Max |
0.006 mA
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
|
| Surface Mount |
NO
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
MILITARY
|
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
|
| Total Dose |
100k Rad(Si) V
|
|
| Base Number Matches |
1
|
7
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare CMM5114D1RZ with alternatives
Compare D2148H with alternatives