CSD17585F5
vs
CSD17585F5T
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
TEXAS INSTRUMENTS INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Date Of Intro |
2016-11-04
|
2016-11-04
|
| Samacsys Manufacturer |
Texas Instruments
|
Texas Instruments
|
| Configuration |
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
5.9 A
|
5.9 A
|
| Drain-source On Resistance-Max |
0.033 Ω
|
0.033 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
7.4 pF
|
7.4 pF
|
| JESD-30 Code |
R-XBCC-N3
|
R-XBCC-N3
|
| JESD-609 Code |
e4
|
e4
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1.4 W
|
1.4 W
|
| Pulsed Drain Current-Max (IDM) |
34 A
|
34 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
NICKEL GOLD
|
NICKEL GOLD
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
CHIP CARRIER, R-XBCC-N3
|
|
|
|