CSD25304W1015
vs
FDZ191P
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
FAIRCHILD SEMICONDUCTOR CORP
|
Package Description |
GRID ARRAY, R-XBGA-B6
|
0.65 MM HEIGHT, ULTRA THIN, BGA-6
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.40
|
8541.29.00.95
|
Samacsys Manufacturer |
Texas Instruments
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
-3 A
|
3 A
|
Drain-source On Resistance-Max |
0.092 Ω
|
0.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
15.6 pF
|
|
JESD-30 Code |
R-XBGA-B6
|
R-PBGA-B6
|
JESD-609 Code |
e1
|
e1
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
6
|
6
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY
|
GRID ARRAY
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation Ambient-Max |
0.75 W
|
|
Power Dissipation-Max (Abs) |
0.75 W
|
1.5 W
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN SILVER COPPER
|
TIN SILVER COPPER
|
Terminal Form |
BALL
|
BALL
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Part Package Code |
|
CSP
|
Pin Count |
|
6
|
Manufacturer Package Code |
|
6 BALL WLCSP, 2X3 ARRAY, 0.5MM PITCH, 300UM BALL
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare CSD25304W1015 with alternatives
Compare FDZ191P with alternatives