CSD75211W1723
vs
PJS6415AE_S1_00001
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
PANJIT INTERNATIONAL INC
|
| Package Description |
1.70 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, WAFER LEVEL-12
|
GREEN, PLASTIC PACKAGE-6
|
| Pin Count |
12
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Texas Instruments
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
4.5 A
|
4.9 A
|
| Drain-source On Resistance-Max |
0.07 Ω
|
0.06 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PBGA-B12
|
R-PDSO-G6
|
| JESD-609 Code |
e1
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
12
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
1.5 W
|
|
| Pulsed Drain Current-Max (IDM) |
4.5 A
|
19.6 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN SILVER COPPER
|
|
| Terminal Form |
BALL
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare CSD75211W1723 with alternatives
Compare PJS6415AE_S1_00001 with alternatives