CY7C1021CV33-12BAE
vs
CY7C1021CV33-12BAET
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
CYPRESS SEMICONDUCTOR CORP
|
| Package Description |
TFBGA,
|
TFBGA,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
3A991.B.2.B
|
3A991.B.2.B
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
12 ns
|
12 ns
|
| JESD-30 Code |
S-PBGA-B48
|
S-PBGA-B48
|
| Length |
7 mm
|
7 mm
|
| Memory Density |
1048576 bit
|
1048576 bit
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
48
|
48
|
| Number of Words |
65536 words
|
65536 words
|
| Number of Words Code |
64000
|
64000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
64KX16
|
64KX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Seated Height-Max |
1.2 mm
|
1.2 mm
|
| Supply Voltage-Max (Vsup) |
3.63 V
|
3.63 V
|
| Supply Voltage-Min (Vsup) |
2.97 V
|
2.97 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
AUTOMOTIVE
|
AUTOMOTIVE
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.75 mm
|
0.75 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
7 mm
|
7 mm
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
BGA
|
| Pin Count |
|
48
|
| JESD-609 Code |
|
e0
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare CY7C1021CV33-12BAE with alternatives
Compare CY7C1021CV33-12BAET with alternatives