DMN26D0UFB4-7
vs
DMG1013T-7
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
DIODES INC
|
DIODES INC
|
Part Package Code |
DFN
|
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE DFN1006H4-3
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Diodes Incorporated
|
Diodes Incorporated
|
Additional Feature |
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
|
HIGH RELIABILITY
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
0.24 A
|
0.46 A
|
Drain-source On Resistance-Max |
3 Ω
|
0.7 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PBCC-N3
|
R-PDSO-G3
|
JESD-609 Code |
e4
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
0.35 W
|
0.27 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
NICKEL PALLADIUM GOLD
|
MATTE TIN
|
Terminal Form |
NO LEAD
|
GULL WING
|
Terminal Position |
BOTTOM
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Package Description |
|
GREEN, PLASTIC PACKAGE-3
|
|
|
|
Compare DMN26D0UFB4-7 with alternatives
Compare DMG1013T-7 with alternatives