DTC143ZCAT116 vs RN1308(TE85L,F) feature comparison

DTC143ZCAT116 ROHM Semiconductor

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RN1308(TE85L,F) Toshiba America Electronic Components

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Factory Lead Time 18 Weeks
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT IN BIAS RESISTOR RATIO IS 2.14
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PDSO-G3
Power Dissipation-Max (Abs) 0.1 W

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Compare RN1308(TE85L,F) with alternatives