EDI8F8512C35M6C vs NS41256S15E/883 feature comparison

EDI8F8512C35M6C White Electronic Designs Corp

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NS41256S15E/883 Texas Instruments

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer WHITE ELECTRONIC DESIGNS CORP NATIONAL SEMICONDUCTOR CORP
Package Description DIP-32 QCCN, LCC32,.45X.55
Reach Compliance Code unknown unknown
Access Time-Max 35 ns 15 ns
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-T32 R-CQCC-N32
Memory Density 4194304 bit 262144 bit
Memory IC Type SRAM MODULE STANDARD SRAM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 524288 words 32768 words
Number of Words Code 512000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 512KX8 32KX8
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Code DIP QCCN
Package Equivalence Code DIP32,.6 LCC32,.45X.55
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.04 A 0.02 A
Standby Voltage-Min 4.5 V 4.5 V
Supply Current-Max 0.39 mA 0.18 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Form THROUGH-HOLE NO LEAD
Terminal Pitch 2.54 mm 1.27 mm
Terminal Position DUAL QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
ECCN Code 3A001.A.2.C
HTS Code 8542.32.00.41
JESD-609 Code e0
Screening Level 38535Q/M;38534H;883B
Terminal Finish TIN LEAD

Compare EDI8F8512C35M6C with alternatives

Compare NS41256S15E/883 with alternatives