EGF1AHE3_B/H vs ES1ALHRVG feature comparison

EGF1AHE3_B/H Vishay Intertechnologies

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ES1ALHRVG Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay Taiwan Semiconductor
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY LOW POWER LOSS
Application EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JEDEC-95 Code DO-214BA
JESD-30 Code R-PDSO-C2 R-PDSO-F2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Reference Standard AEC-Q101 AEC-Q101
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.05 µs 0.035 µs
Reverse Test Voltage 50 V
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description SMA, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.80
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare EGF1AHE3_B/H with alternatives

Compare ES1ALHRVG with alternatives