EGF1DHE3_A/I
vs
HS2DAR3G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Date Of Intro |
2017-08-23
|
|
| Samacsys Manufacturer |
Vishay
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Peak Reflow Temperature (Cel) |
250
|
250
|
| Terminal Finish |
Matte Tin (Sn)
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
SMA, 2 PIN
|
| Application |
|
EFFICIENCY
|
| Configuration |
|
SINGLE
|
| Diode Element Material |
|
SILICON
|
| Forward Voltage-Max (VF) |
|
1 V
|
| JEDEC-95 Code |
|
DO-214AC
|
| JESD-30 Code |
|
R-PDSO-C2
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Number of Elements |
|
1
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Output Current-Max |
|
1.5 A
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Rep Pk Reverse Voltage-Max |
|
200 V
|
| Reverse Current-Max |
|
5 µA
|
| Reverse Recovery Time-Max |
|
0.05 µs
|
| Surface Mount |
|
YES
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
|
|
|
Compare EGF1DHE3_A/I with alternatives
Compare HS2DAR3G with alternatives