EGFM102-H
vs
ESH2BAR2G
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
FORMOSA MICROSEMI CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
SMA, 2 PIN
|
SMA, 2 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-214AC
|
DO-214AC
|
| JESD-30 Code |
R-PDSO-F2
|
R-PDSO-C2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
LOW POWER LOSS
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Pk Forward Current-Max |
|
50 A
|
| Peak Reflow Temperature (Cel) |
|
250
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare EGFM102-H with alternatives
Compare ESH2BAR2G with alternatives