ES1B-GT3 vs GS1B feature comparison

ES1B-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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GS1B JGD Semiconductors Co Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD JGD SEMICONDUCTORS CO LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
Additional Feature LOW POWER LOSS
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.05 µs 1.8 µs
Surface Mount YES YES
Terminal Form C BEND
Terminal Position DUAL
Base Number Matches 2 20
Forward Voltage-Max (VF) 1.1 V
Non-rep Pk Forward Current-Max 30 A
Operating Temperature-Max 150 °C

Compare ES1B-GT3 with alternatives

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