ES1M
vs
HS1MTRTB
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
FAGOR ELECTRONICA S COOP
|
| Part Package Code |
SMA
|
|
| Package Description |
SMA, 2 PIN
|
R-PDSO-C2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
SUPER FAST RECOVERY
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
2.5 V
|
|
| JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
| Non-rep Pk Forward Current-Max |
30 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Reverse Current-Max |
10 µA
|
|
| Reverse Recovery Time-Max |
0.035 µs
|
0.075 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
40
|
| Base Number Matches |
13
|
1
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
FREE WHEELING DIODE, LOW POWER LOSS
|
| JEDEC-95 Code |
|
DO-214AC
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Reference Standard |
|
AEC-Q101
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare ES1M with alternatives
Compare HS1MTRTB with alternatives