FDC655BN vs BSD840NL6327 feature comparison

FDC655BN Fairchild Semiconductor Corporation

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BSD840NL6327 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code SSOT
Package Description ROHS COMPLIANT, SUPERSOT-6 SMALL OUTLINE, R-PDSO-G6
Pin Count 6 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature ULTRA-LOW RESISTANCE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 20 V
Drain Current-Max (ID) 6.3 A 0.88 A
Drain-source On Resistance-Max 0.025 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 90 pF
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 2
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W 0.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1

Compare FDC655BN with alternatives

Compare BSD840NL6327 with alternatives