FDN359AN vs SSM6K209FE feature comparison

FDN359AN Rochester Electronics LLC

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SSM6K209FE Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC TOSHIBA CORP
Part Package Code SOT
Package Description SUPERSOT-3 2-2N1A, ES6, 6 PIN
Pin Count 3 6
Manufacturer Package Code SUPERSOT
Reach Compliance Code unknown unknown
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 2.7 A 2.5 A
Drain-source On Resistance-Max 0.046 Ω 0.074 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3 R-PDSO-F6
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
ECCN Code EAR99
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.5 W

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